Irf240 mosfet datasheet
Web©2002 Fairchild Semiconductor Corporation IRFP240 Rev. B IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of WebGeneral Electric's IRF240 is power mosfet field defect power transistor in the fet transistors, mosfets category. Check part details, parametric & specs updated 21 SEP 2024 and download pdf datasheet from datasheets.com, a global distributor of …
Irf240 mosfet datasheet
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WebIRFP240 Datasheet (HTML) - International Rectifier IRFP240 Product details Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, … WebFeb 12, 2024 · Factory Pack Quantity: 500. Subcategory: MOSFETs. Width: 5.31 mm. Unit Weight: 0.211644 oz. Select at least one checkbox above to show similar products in this category.
WebOct 29, 2024 · IRFP240 20A 200V N-Channel Power MOSFET is an advanced line of power MOSFET transistors. It is the third generation Power MOSFETs from Vishay that provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. WebApr 10, 2024 · Description: MOSFET Datasheet: IRF240 Datasheet (PDF) Compare Product Add To Project Add Notes Availability Stock: Non-Stocked, Call for Quote FEATURED PRODUCTS INFINEON View All Newest Products from Infineon Specifications Select at least one checkbox above to show similar products in this category. Show Similar Attributes …
WebFeb 13, 2024 · The IRF740 is an N-channel power MOSFET used for extremely fast switching applications. It comes with a power dissipation of around 125W and can support load up to 400V. The maximum drain current of this device is 10A and drain-source capacitance is … WebApr 3, 2024 · Description: MOSFET 200V N-CH HEXFET Datasheet: IRFP240PBF Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model. Compare Product Add To Project Add Notes In Stock: 8,362 Stock: 8,362 Can Ship Immediately Factory Lead-Time: 30 Weeks Minimum: 1 Multiples: 1 …
WebAug 26, 2024 · IRFP9240 Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are three-terminal silicon devices that function by applying a signal to the gate that controls current conduction between source and drain. IRFP9240 Vishay Siliconix In Stock: 24544 Contact Name Business Email Company Name Country United States
WebN-CHANNEL POWER MOSFET, IRF240 Datasheet, IRF240 circuit, IRF240 data sheet : SAMSUNG, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors. ... N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS Fairchild Semiconductor: IRF240: … mccarty and associatesWeb©2002 Fairchild Semiconductor Corporation IRFP240 Rev. B IRFP240 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of mccarty and associates hillsboro ohioWebInfineon Technologies AG's IRF240 is trans mosfet n-ch 200v 18a 3-pin(2+tab) to-3 in the fet transistors, mosfets category. Check part details, parametric & specs updated 15 OCT 2024 and download pdf datasheet from datasheets.com, a global distributor of … mccarty and associates surveyingWebHEXFET® Power MOSFET This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. mccarty and macleodWebIRFP240. Power MOSFET. General Information. General Information. Useful Web Links. Markings. Part Marking Information. Devices: TO-247AC, TO-247AD, TO-274AA (High Voltage) Package Drawings. mccarty and raburnWebInfineon IRF240 technical specifications, attributes, and parameters. Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line. 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF240 with Standard Packaging. Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3. mccarty alisonWebIRF240 200V Single N-channel Hi-rel MOSFET in a TO-204AE Package . The HEXFETtechnology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with mccarty and heffernan attorneys at law